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Electrical Formulas, Calculations, Basic Electronics Engineering Reference

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Electrical Formulas, Calculations,VitalElectronics Engineering Reference BASIC ELECTRICAL and ELECTRONICS ENGINEERING FORMULAS EE REFERENCE, THEOREMS, CIRCUIT DESIGN AND ANALYSIS, ELECTRIC CALCULATIONS <---------------------------------------------------------------------------------------------------------------------------> Home Tutorial Topologies SMPS diamond Thermal diamond Software PCB diamond Computer PSU UPSSpinTransformers Formulas EE Reference Inverters Generators Solar Let's start with quick definitions. Electronics involves the diamond and wringer of electronic circuits. Originally, this subject was referred to as radio engineering. The term "circuit" refers to a hodgepodge of components through which electrical current can spritz or which use electromagnetic fields in their operation.Vitalspin diamond and wringer rests primarily on two Kirchoff's laws, Ohm's law modified for AC circuits, and power relationships (see below). There are moreover a number of network theorems and methods (such as Thevenin, Norton, Superposition, Y-Delta transform) that are consequences of these three laws. In order to simplify calculations in AC circuits, sinusoidal voltages and currents are usually represented as complex-valued functions tabbed phasors. With phasors we need to solve trigonometric equations instead of differential equations (see below). In general, practical spin diamond and wringer requires an understanding of semiconductor devices, integrated circuits, magnetics, DSP, and feedback control. Here you will find electricity and magnetism reference, vital electrical engineering formulas, calculators, and other related information.Moreoversee: Electrical engineering reference: electric network laws and theorems; Electronic parts datasheet and cross-reference;Self-rulingtech ebooks and white papers; The guide to accredited online schools, loftiness learning programs and courses. FORMULAS FOR THE BASIC CIRCUIT COMPONENTS CIRCUIT ELEMENT IMPEDANCE VOLT-AMP EQUATIONS ENERGY (dissipated on R or stored in L, C) wool value ramified form instantaneous values RMS values for sinusoidal signals RESISTANCE R R v=i×R Vrms=Irms×R E=Irms2R×t INDUCTANCE 2πfL jωL v=L×di/dt Vrms=Irms×2πfL E=Li2/2 CAPACITANCE 1/(2πfC) 1/jωC i=C×dv/dt Vrms=Irms/(2πfC) E=Cv2/2 Notes: R- resistance in ohms, L- inductance in henrys, C- capacitance in farads, f - frequency in hertz, t- time in seconds, π≈3.14159; ω=2πf - weedy frequency; j - imaginary unit ( j2=-1 ) Euler's formula: ejx=cosx+jsinx EQUATIONS FOR SERIES AND PARALLEL CONNECTIONS CIRCUIT ELEMENT SERIES CONNECTION PARALLEL CONNECTION RESISTORS Rseries= R1+R2+... Rparallel= 1/ (1/R1+1/R2+...) INDUCTORS Lseries= L1+L2+... Lparallel= 1/(1/L1+1/L2+...) CAPACITORS Cseries= 1/ (1/C1+1/C2+...) Cparallel= C1+C2+... CALCULATIONS OF EQUIVALENT RLC IMPEDANCES CIRCUIT CONNECTION COMPLEX FORM ABSOLUTE VALUE Series Z=R+jωL+1/jωC Parallel Z= 1/(1/R+1/jωL+jωC) Note: you can download a reference "cheat sheet" with these and other formulas in pdf file. TRANSISTORS AND DIODES: THE BASICS The properties of semiconductor devices are studied in higher courses. The introduction to the circuits including operation of diodes and transistors and vital formulas can be found in various textbooks or handbooks, such as The Art of Electronics.Unelevatedare just some highlights. The I-V foible of a diode is approximated by the Shockley equation: I=Is×(enVd/Vt-1), where Is - the reverse bias saturation current (~10−15 to 10−12 A for Silicon); Vd - forward voltage waif in volts; Vt - the thermal voltage (~0.026V at room temperature), n - the "ideality factor" (from 1 to 2). At a stock-still current I, voltage waif Vd changes by well-nigh -2 mV/oC. In a bipolar transistor collector current Ic in linear mode is related to the base-emitter voltage by the same Shockley (also tabbed Ebers-Moll) equation, except for n=1. The collector current relates to the wiring current IB by Ic=IB×h21, where h21 - static current proceeds (typically 20-1000). However, Ic can't exceed Vin/|Z|, where Vin- the supply voltage, Z- net impedance in the external collector circuit. When Ic reaches the whilom limit, the transistor is saturated. MOSFET policies varies with the gate voltage Vg. When Vg<Vth, where Vth - gate threshold voltage, the MOSFET is in OFF state with phlebotomize current Id≈0. When Vg>Vth and the external load is such that Vd>Vg-Vth, the MOSFET is in an zippy region, in which Id is proportional to the (Vg-Vth)2 and practically does not depend on the Vd. Once Id reaches unrepealable limit unswayable by an external circuit, MOSFET start vicarial as a nearly unvarying resistance. In this mode Vds≈Id×Rdson, where Rdson - the ON-state channel's resistance specified in data sheets as a function primarily of temperature and gate voltage. Power MOSFETs are usually used as switching devices which operate in either ON or OFF state. ELECTRONIC COMPONENT SEARCH: DATASHEET, ONLINE CATALOGS, AND APP NOTES ELECTRICITY AND MAGNETISM Classical electromagnetism reference: Maxwell's equations, electrical formulas, theorems, tutorialsVitalElectronics- self-ruling ebooks and online tutorials with simulations and troubleshooting ELECTRONICS REFERENCE An introduction to vital electronic spin diamond and wringer Electronic components - navigate reference and parts' search My picks of books on electronics and spin diamond ELECTRIC CALCULATION PROGRAMS A hodgepodge of electrical engineering software and other tools Online scientific calculator Metric to U.S. calculator online Disclaimer, Disclosure and Terms of Use | Contact Us |Well-nighUs | Privacy © 2007, 2017 Lazar Rozenblat